Solid State Electronic Devices |
Contents
Atoms and Electrons | 26 |
Semiconductors | 52 |
Excess Carriers in Semiconductors | 95 |
Copyright | |
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acceptor alloyed applications approximation assume atoms avalanche band gap base current base region biased bonding breakdown calculate capacitance carrier density cathode channel chip cm³ collector current collector junction components conduction band constant crystal depletion region device diffusion discussed domain doping drift electric field electrons and holes emission emitter and collector emitter junction epitaxial equation equilibrium example excess carriers excess hole fabrication FIGURE forward bias frequency GaAs gate hole density hole distribution important impurity increase j₂ laser lattice material metal minority carrier mode monolithic circuits n-p-n transistors n-type negative conductance operation optical p-n junction p-n-p transistor photons population inversion potential Prob pulse recombination resistance resistor result reverse bias sample saturation current Section semiconductor shown in Fig SiO2 space charge stored charge structure substrate surface switching techniques temperature thermal tion transistor transition region tunnel diode valence band wafer width wire zero