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Quantitative Impurity Analysis in Si by the Photoluminescence Technique
Photoacoustic and CurrentInjectionInduced Acoustic Spectroscopy
An Isolation Technique Using a Buried Silicon Dioxide Layer Formed
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2DEG active layer AlGaAs anode Appl atoms breakdown voltage capacitance carrier characteristics circuit concentration CoSi2 decreases density deposition developed diffusion diode doped drain current drain voltage dry etching effect electrical Electron Devices etch rate experimental fabrication Figure frequency function GaAs MESFETs gate bias gate oxide gate voltage HEMT heterojunction high pressure oxidation IEEE IEEE Trans implantation impurity increase integrated circuits interface Japan laser diodes lasers lasing wavelength Lett mask measured MESFETs metal microwave Nishizawa nitride film obtained operation output oxidation temperature oxide film parameters pattern photodiode photoresist Phys plasma etching plasma polymerization poly-Si polymer polysilicon ratio reaction region resistance room temperature sample semiconductor shown in Fig shows signal silicide silicon SiO2 SisN4 spectra structure substrate surface switching Tech thermal nitride threshold current threshold voltage thyristor Tokyo transistor transverse mode wafer width