Strained Silicon Heterostructures: Materials and DevicesC. K. Maiti, N. B. Chakrabarti, S. K. Ray, Institution of Electrical Engineers This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists. |
Contents
Strained Layer Epitaxy | 24 |
Electronic Properties of Alloy Layers | 98 |
Gate Dielectrics on Strained Layers | 162 |
SiGe Heterojunction Bipolar Transistors | 210 |
Heterostructure Field Effect Transistors | 272 |
BICFET RTD and Other Devices | 340 |
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annealing Appl applications B. S. Meyerson band offset bandgap BiCMOS boron buffer layer bulk C. K. Maiti carbon chemical vapor deposition circuits cm²/Vs CMOS collector concentration conduction band current gain density devices diodes dislocation dopant effect electron mobility emitter energy enhancement etch fabricated fmax function gate oxide grown growth heterojunction bipolar transistors heterostructures hole mobility IEEE IEEE Electron Dev IEEE IEDM Tech IEEE Trans implantation increase interface lattice Lett low temperature microwave mole fraction molecular beam epitaxy MOSFETs optical p-MOSFETs p-type performance photodetectors Phys plasma Proc quantum rapid thermal room temperature S. K. Ray samples Schottky Schottky diode semiconductor shown in figure Si-Ge Si/SiGe Si₁-Ge SiGe SiGe alloy SiGe channel SiGe layer SiGe-HBTs SiGeC Silicon SiO2 strained layer strained SiGe structure substrate superlattices surface Technol thickness thin transconductance UHVCVD unstrained valence band waveguide
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Page 488 - Lett. 50, 760(1987). *TP Pearsall, J. Bevk, LC Feldman, JM Bonar, JP Mannaerts, and A. Ourmazd, Phys. Rev. Lett. 58, 729 (1987).