Molecular Beam Epitaxy: From Research to Mass Production

Front Cover
Mohamed Henini
Newnes, Dec 31, 2012 - Technology & Engineering - 744 pages

This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a ‘how to’ on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.

MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage.

  • Condenses fundamental science of MBE into a modern reference, speeding up literature review
  • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
  • Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
 

What people are saying - Write a review

We haven't found any reviews in the usual places.

Contents

fundamentals historical background and future prospects
1
present and near future
47
Chapter 3 Growth of semiconductor nanowires by molecular beam epitaxy
55
Chapter 4 Droplet epitaxy of nanostructures
95
Chapter 5 Migrationenhanced epitaxy for lowdimensional structures
113
Chapter 6 MBE growth of highmobility 2DEG
121
Epitaxial growth and physical properties
139
Chapter 8 Molecular beam epitaxy of GaAsBi and related quaternary alloys
159
Chapter 18 Epitaxial systems combining oxides and semiconductors
451
Chapter 19 Molecular beam epitaxy of IIIV ferromagnetic semiconductors
477
model systems to study the physics in nanomagnetism and spintronic
487
Chapter 21 Atomic layerbylayer molecular beam epitaxy of complex oxide films and heterostructures
509
Chapter 22 Molecular beam epitaxy of semimagnetic quantum dots
529
Chapter 23 Graphene growth by molecular beam epitaxy
547
Chapter 24 Growth and characterisation of fullereneGaAs interfaces and C60doped GaAs and AlGaAs layers
559
Chapter 25 Molecular beam epitaxial growth and exotic electronic structure of topological insulators
579

Chapter 9 MBE of dilutenitride optoelectronic devices
171
Chapter 10 Effect of antimony coverage on InAsGaAs 001 heteroepitaxy
189
from the basics of growth to device applications
203
Chapter 12 Molecular beam epitaxy of lowbandgap InGaN
217
multilayers quantum dots and device applications
263
Chapter 14 Epitaxial growth of thin films and quantum structures of IIVI visiblebandgap semiconductors
311
Chapter 15 MBE of transparent semiconducting oxides
347
Chapter 16 Zinc oxide materials and devices grown by MBE
369
Chapter 17 Molecular beam epitaxy of complex oxides
417
interfaces and epitaxial growth
591
Chapter 27 Molecular beam epitaxy of widegap IIVI laser heterostructures
611
Chapter 28 MBE growth of THz quantum cascade lasers
631
Chapter 29 Systems and technology for productionscale molecular beam epitaxy
657
Chapter 30 Mass production of optoelectronic devices
681
Chapter 31 Mass production of sensors grown by MBE
697
Index
721
Copyright

Other editions - View all

Common terms and phrases

About the author (2012)

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

Bibliographic information