Measurement and Modeling of Silicon Heterostructure DevicesWhen you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters. |
Contents
BestPractice AC Measurement Techniques | 4-1 |
Industrial Application of TCAD for SiGe Development | 5-1 |
Compact Modeling of SiGe HBTs HICUM | 6-1 |
Compact Modeling of SiGe HBTs Mextram | 7-1 |
CAD Tools and Design Kits | 8-1 |
Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs | 9-1 |
Transmission Lines on Si | 10-1 |
Improved DeEmbedding Techniques | 11-1 |
Properties of Silicon and Germanium | 11-15 |
The Generalized MollRoss Relations | 11-19 |
Integral ChargeControl Relations | 11-25 |
Sample SiGe HBT Compact Model Parameters | 11-39 |
Back Cover | 11-49 |
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Measurement and Modeling of Silicon Heterostructure Devices John D. Cressler No preview available - 2007 |
Common terms and phrases
accurate addition applications approach bandgap base bias bipolar transistors calibration capacitance Chapter characteristics charge circuit CMOS coefficient collector compact model components connected constant coupling current densities de-embedding defined demonstrated dependence depletion derived determination device diffusion Digest distributed doping early effects electrical Electron Electron Devices elements emitter epilayer epitaxy Equation extraction factor field Figure frequency given heterostructure HICUM hole IEEE impedance important integrated interconnect internal intrinsic junction layer layout material measurement Meeting method methodology Mextram noise operation parameters parasitics performance physical port range reference region relation represents resistance respective S-parameters scaling semiconductor shows SiGe HBT signal silicon simulation standard strained structures substrate Technical techniques temperature transfer current transmission line voltage
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