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Books Books 1 - 4 of 4 on ... dependence on operating point, technological parameters, and temperature. Proc.....
" ... dependence on operating point, technological parameters, and temperature. Proc. IEEE Bipolar Circuits and Technology Meeting, Minneapolis, 1989, pp. 85-88. 15. S. Tiwari. A new effect at high currents in heterostructure bipolar transistors. IEEE Electron... "
Broadband Circuits for Optical Fiber Communication - Page 419
by Eduard Säckinger - 2005 - 440 pages
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Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits ...

John D. Cressler - Technology & Engineering - 2018 - 1248 pages
...heterostructure bipolar transistors. IEEE Electron Dev. Lett. 9, 142-144, 1988. 16. M. Rickelt and H.-M. Rein. A novel transistor model for simulating avalanche-breakdown...in Si bipolar circuits. IEEEJ. Solid-State Circuits 37, 1184-1197, 2002. 17. H.-M. Rein and M. Schroter. Experimental determination of the internal base...
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Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits ...

John D. Cressler - Technology & Engineering - 2018 - 1248 pages
...heterostructure bipolar transistors. IEEE Electron Dev. Lett. 9, 142-144, 1988. 16. M. Rickelt and H.-M. Rein. A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits. IEEE J. Solid-State Circuits 37, 1184-1197, 2002. 17. H.-M. Rein and M. Schroter. Experimental determination...
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Measurement and Modeling of Silicon Heterostructure Devices

John D. Cressler - Technology & Engineering - 2016 - 200 pages
...heterostructure bipolar transistors. IEEE Electron Dev. Lett. 9, 142-144, 1988. 16. M. Rickelt and H.-M. Rein. A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits. IEEE J. Solid-State Circuits 37, 1184-1197, 2002. 17. H.-M. Rein and M. Schroter. Experimental determination...
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Analog Circuit Design: Sensors, Actuators and Power Drivers; Integrated ...

Herman Casier, Michiel Steyaert, Arthur H.M. van Roermund - Technology & Engineering - 2008 - 362 pages
...and power parameters of transistors," RCA Rev., vol. 26, pp. 163-177, 1965. [9] M. Rickelt and H.-M. Rein, "A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuits," IEEE J. Solid-State Circuits, vol. 37, no. 9, pp. 1184-1197, Sept. 2002. [10] R. Singh, DL Harame,...
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