Molecular Beam Epitaxy: From Research to Mass Production

Front Cover
Mohamed Henini
Elsevier, Jun 27, 2018 - Science - 788 pages

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage.

This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures.

  • Condenses the fundamental science of MBE into a modern reference, speeding up literature review
  • Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research
  • Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
 

Contents

1 Molecular Beam Epitaxy of Transition Metal Monopnictides
1
2 Migrationenhanced Epitaxy for Lowdimensional Structures
27
3 Molecular Beam Epitaxy of High Mobility Silicon Silicon Germanium and Germanium Quantum Well Heterostructures
37
4 Molecular Beam Epitaxy Growth of SiGeSn Alloys
55
5 Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices
73
From the Basics of Growth to Device Applications
95
7 Molecular Beam Epitaxy of AlGaN Nanowire Heterostructures and Their Application in Ultraviolet Optoelectronics
115
8 Kinetics of MetalRich PA Molecular Beam Epitaxy of AlGaN Heterostructures for MidUV Photonics
135
19 Molecular Beam Epitaxy of Hybrid Topological InsulatorFerromagnetic Heterostructures and Devices
421
An Overview
443
21 Molecular Beam Epitaxy of Graphene and Hexagonal Boron Nitride
487
22 Molecular Beam Epitaxy of Transition Metal Dichalcogenides
515
23 Growth and Characterization of FullereneGaAs Interfaces and C60Doped GaAs and AlGaAs Layers
533
Interfaces and Epitaxial Growth
551
25 Molecular Beam Epitaxy of Wide Gap IIVI Laser Heterostructures
571
26 THz Quantum Cascade Lasers
597

9 InAsBi Materials
181
10 Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys
197
Fundamentals Lowdimensional Structures and Device Applications
211
12 SiteControlled Epitaxy of InAs Quantum Dots on Nanoimprint Lithography Patterns
277
13 Droplet Epitaxy of Nanostructures
293
14 LayerbyLayer Growth of Thin Films of Ternary Alloys of IIVI Semiconductors by Submonolayer Pulsed Beam Epitaxy SPBE
315
15 Molecular Beam EpitaxyGrown Wide Band Gap IIVI Semiconductors for Intersubband Device Applications
327
16 Zinc Oxide Materials and Devices Grown by Molecular Beam Epitaxy
343
17 Epitaxial Systems Combining Oxides and Semiconductors
377
18 Nanoscale Engineering of Gebased Diluted Magnetic Semiconductors for RoomTemperature Spintronics Application
403
27 GaSb Lasers Grown on Silicon Substrate for Telecom Applications
625
28 GaPSiBased Photovoltaic Devices Grown by Molecular Beam Epitaxy
637
29 Systems and Technology for ProductionScale Molecular Beam Epitaxy
649
30 Mass Production of Optoelectronic Devices
677
31 Mass Production of Sensors Grown by Molecular Beam Epitaxy
693
32 Molecular Beam Epitaxy as a Mass Production Enabling Technology for ElectronicOptoelectronic Devices
721
Present and Near Future
741
Index
751
Back Cover
775
Copyright

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About the author (2018)

Dr M. Henini has over 20 years’ experience of Molecular Beam Epitaxy (MBE) growth and has published >700 papers. He has particular interests in the MBE growth and physics of self-assembled quantum dots using electronic, optical and structural techniques. Leaders in the field of self-organisation of nanostructures will give an account on the formation, properties, and self-organization of semiconductor nanostructures.

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